document number: 94589 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-jun-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 surface mountable phase control scr, 16 a vs-16tts..spbf high voltage series vishay semiconductors features ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? designed and qualified for industrial level applications ? input rectification (soft start) ? vishay input diodes, switches and output rectifiers which are available in identical package outlines description the vs-16tts..spbf high voltage series of silicon controlled rectifiers are spec ifically designed for medium power switching and phase cont rol applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. note ?t a = 55 c, t j = 125 c, footprint 300 mm 2 product summary v t at 10 a < 1.4 v i tsm 200 a v rrm 800 v/1200 v 3 gate 2 anode 1 cathode d 2 pak output current in typical applications applications single-phase br idge three-phase bridge units nema fr-4 or g-10 glass fabric-based epoxy with 4 oz. (140 m) copper 2.5 3.5 a aluminum ims, r thca = 15 c/w 6.3 9.5 aluminum ims with heatsink, r thca = 5 c/w 14.0 18.5 major ratings and characteristics symbol characteristics values units i t(av) sinusoidal waveform 10 a i rms 16 v rrm /v drm 800/1200 v i tsm 200 a v t 10 a, t j = 25 c 1.4 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma vs-16tts08spbf 800 800 10 vs-16tts12spbf 1200 1200
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94589 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 08-jun-10 vs-16tts..spbf high voltage series vishay semiconductors surface mountable phase control scr, 16 a absolute maximum ratings parameter symbol test conditions values units typ. max. maximum average on-state current i t(av) t c = 98 c, 180 conducti on, half sine wave 10 a maximum rms on-state current i rms 16 maximum peak, one-cycle, non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied 170 10 ms sine pulse, no voltage reapplied 200 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 144 a 2 s 10 ms sine pulse, no voltage reapplied 200 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 2000 a 2 s maximum on-state voltage drop v tm 10 a, t j = 25 c 1.4 v on-state slope resistance r t t j = 125 c 24.0 m threshold voltage v t(to) 1.1 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h anode supply = 6 v, resistive load, initial i t = 1 a - 100 maximum latching current i l anode supply = 6 v, resistive load 200 maximum rate of rise of off-state voltage dv/dt 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current + i gm 1.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc ga te current to trigger i gt anode supply = 6 v, resistive load, t j = - 10 c 90 ma anode supply = 6 v, resistive load, t j = 25 c 60 anode supply = 6 v, resistive load, t j = 125 c 35 maximum required dc ga te voltage to trigger v gt anode supply = 6 v, resistive load, t j = - 10 c 3.0 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate volt age not to trigger v gd t j = 125 c, v drm = rated value 0.25 maximum dc gate curr ent not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical reverse recovery time t rr t j = 125 c 4 typical turn-off time t q 110
document number: 94589 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-jun-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-16tts..spbf high voltage series surface mountable phase control scr, 16 a vishay semiconductors note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m) copper 40 c/w. for recommended footprint and soldering techniques refer to application note #an-994. fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 125 c soldering temperature t s for 10 s (1.6 mm from case) 240 maximum thermal resistance, junction to case r thjc dc operation 1.3 c/w typical thermal resistance, junction to ambient r thja pcb mount (1) 40 approximate weight 2g 0.07 oz. marking device case style d 2 pak (smd-220) 16tts08s 16tts12s 90 95 100 105 110 115 120 125 024681012 30 60 90 120 180 conduction angle average on-state current (a) maximum allowable case temperature (c) 16tts.. series r (dc) = 1.3 c/w thjc 90 95 100 105 110 115 120 125 0246810121416 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average on-state current (a) 16tts.. series r (dc) = 1.3 c/w thjc 0 2 4 6 8 10 12 14 16 18 01234567891011 rms limit 180 120 90 60 30 cond uction an gle average on-state current (a) maximum average on-state power loss (w) 16tts.. series t = 125c j 0 5 10 15 20 25 024681012141618 dc 180 120 90 60 30 rms limit conduction period average on-state current (a) max imum average on-state power loss (w) 16tts.. series t = 125c j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94589 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 08-jun-10 vs-16tts..spbf high voltage series vishay semiconductors surface mountable phase control scr, 16 a fig. 5 - maximum non-repetitive surge current fig. 6 - maximu m non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 80 100 120 140 160 180 110100 number of equal amplit ude half c ycle current pulses (n) at any rated load condition and with rated v applied following surge. initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s rrm j peak half sine wave on-state current (a) 16tts..series 80 100 120 140 160 180 200 0.01 0.1 1 pulse train duration (s) maximum non repetitive surge current peak half sine wave forward current (a) versus pulse train duration. initial t = 125c no voltage reapplied rated v reapplied j rrm 16tts.. series 1 10 100 1000 012345 t = 25c j t = 125c j instantaneous on-st ate voltage (v) instantaneous on-state current (a) 16tts.. series 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc steady state value (dc operation) 16tts.. series single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 transient thermal impedance z (c/w)
document number: 94589 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-jun-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-16tts..spbf high voltage series surface mountable phase control scr, 16 a vishay semiconductors fig. 9 - gate characteristics ordering information table links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) rectangular gate pulse (4) (3) (2) (1) instan taneous gate curren t (a) instantaneous gate voltage (v) tj = 25 c tj = 125 c b)recommended load line for vgd igd frequency limited by pg(av) a)recommended load line for rated di/dt: 10 v, 20 ohms tr = 0.5 s, tp >= 6 s <= 30% rated di/dt: 10 v, 65 ohms tr = 1 s, tp >= 6 s (1) pgm = 40 , tp = 1 ms (2) pgm = 20 w, tp = 2 ms (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms tj = -10 c 16tts.. series 08 = 800 v 12 = 1200 v - 1 - hpp product suffix 2 - current rating 3 - circuit configuration: 4 - package: - pbf = lead (pb)-free 5 6 - voltage rating: voltage code x 100 = v rrm t = single thyristor - type of silicon: t = to-220ac s = standard recovery rectifier 9 7 - s = to-220 d 2 pak (smd-220) version 8 none = tube trl = tape and reel (left oriented) trr = tape and reel (right oriented) device code 5 1 3 24 6789 vs- 16 t t s 12 s trl pbf
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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